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XP08081|XP8081 Datasheet

  • XP08081|XP8081

  • Composite Device - Composite Transistors

  • 110.31KB

  • 5頁

  • ETC

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Composite Transistors
XP08081
(XP8081)
Silicon n-channel junction FET (Tr1)
Silicon NPN epitaxial planar type (Tr2)
For analog switching (Tr1)/switching (Tr2)
鈻?/div>
Features
鈥?/div>
Two elements incorporated into one package
(Tr
+
Transistors with built-in resistor)
鈥?/div>
Reduction of the mounting area and assembly cost by one half
(0.425)
Unit: mm
0.12
+0.05
鈥?.02
0.2
鹵0.05
6
5
4
1.25
鹵0.10
2.1
鹵0.1
1
2
3
(0.65) (0.65)
鈻?/div>
Basic Part Number
鈥?/div>
2SK1103
+
UNR2213 (UN2213)
10藲
1.3
鹵0.1
2.0
鹵0.1
0.9
鹵0.1
Parameter
Tr1
Gate-drain surrender voltage
Drain current
Gate current
Tr2
Collector-base voltage
(Emitter open)
Collector-emitter voltage
(Base open)
Collector current
Overall
Total power dissipation
Junction temperature
Storage temperature
Symbol
V
GDS
I
D
I
G
V
CBO
V
CEO
I
C
P
T
T
j
T
stg
Rating
鈭?0
20
10
50
50
100
150
150
鈭?5
to
+150
Unit
V
mA
mA
V
V
1: Drain (Tr1)
2: Source (Tr1)
3: Collector (Tr2)
EIAJ: SC-88
0 to 0.1
Marking Symbol: 9Z
Internal Connection
mA
mW
擄C
擄C
6
5
0.9
+0.2
鈥?.1
鈻?/div>
Absolute Maximum Ratings
T
a
=
25擄C
4: Emitter (Tr2)
5: Base (Tr2)
6: Gate (Tr1)
SMini6-G1 Package
4
Tr1
Tr2
1
2
3
Note) The part number in the parenthesis shows conventional part number.
Publication date: February 2004
SJJ00218BED
0.2
鹵0.1
5藲
1

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